Document Details

Document Type : Article In Journal 
Document Title :
Single crystalline quasi aligned one dimensional P-type Cu2O nanowire for improving Schottky barrier characteristics
Single crystalline quasi aligned one dimensional P-type Cu2O nanowire for improving Schottky barrier characteristics
 
Subject : Chemistry 
Document Language : English 
Abstract : Schottky diodes usually exhibit non-ideal characteristics. The departure from an ideal junction may result from a thick interfacial layer between the semiconductor and metal, or the presence of series resistance from the bulk semiconductor below the depletion region and back side Ohmic contact resistance. In the present work an attempt was made to avoid most of these factors in order to obtain Schottky diode with better characteristics. For such purpose, single crystalline vertically aligned P-type Cu2O nanowires are deposited on a silicon substrate using solid-vapor technique, without using a catalyst or pre-deposited buffer layers. The structure and morphology of the as-synthesized nanowires are characterized using X-ray diffraction, scanning and transmission electron microscopy. The results showed that the use of CuCl2 is critical for the formation of Cu2O nanowires. The (I-V) and (C-V) characteristic curves of Au/p-Cu2O Schottky diode were measured. The results showed that the ideality factor, barrier height and donor state density states equal 1.05, 1.32 eV and 3.65 × 1018 cm-3, respectively. 
ISSN : 0167-577X 
Journal Name : Materials Letters 
Volume : 65 
Issue Number : 12 
Publishing Year : 1432 AH
2011 AD 
Article Type : Article 
Added Date : Wednesday, February 8, 2012 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
محمد حافظHafez, Mohammad ResearcherDoctorate 
فهد مسعود المرزوقيAl-Marzouki, Fahad MResearcherDoctoratefmarzouki1@kau.edu.sa
وليد السيد محمودMahmoud, Waleed EResearcherDoctoratew_e_mahmoud@yahoo.com

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