Document Details Document Type : Article In Journal  Document Title : Electrical properties of p-Si/n-ZnO nanowires heterojunction devices Electrical properties of p-Si/n-ZnO nanowires heterojunction devices   Subject : Physics  Document Language : English  Abstract : This paper explores the temperature dependent heterojunction behavior of n-type zinc oxide (ZnO) nanowires/p-Si diodes. The device behavior at different temperatures in forward as well as reverse biased conditions are studied and reported. From the detailed electrical properties, it is confirmed that the fabricated p-n diode showed a good stability over the temperature range of 25-130 °C. The turn-on and breakdown voltage of the device slightly decreases with an increase of temperature whereas the saturation current of the device increases. The effective potential barrier height is found increasing with the increase in temperature. The quality factor is found with and without the consideration of barrier height inhomogenity. The mean potential barrier is also determined. Moreover, a value of activation energy of 53 meV which is close to the exciton binding energy of ZnO, is estimated.  ISSN : 1936-6612  Journal Name : Advanced Science Letters  Volume : 4  Issue Number : 1  Publishing Year : 1432 AH 2011 AD  Article Type : Article  Added Date : Saturday, June 16, 2012  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email صالح هديهد الحنيطي Al-Heniti, Saleh H Researcher Doctorate salheniti@kau.edu.sa رشاد إبراهيم بدران Badran, Rashad Ibrahim Researcher Doctorate rbadran_i@yahoo.com أحمد عبدالله الغامدي Al-Ghamdi, Ahmad A Researcher Doctorate AGAMDI@kau.edu.sa فيصل عبدالعزيز العقل Al-Agel, Faisal A Researcher Doctorate fagel@kau.edu.sa Files File Name Type Description  33607.pdf pdf Abstract Back To Researches Page